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THIN INAS EPITAXIAL LAYERS GROWN ON (100) GAAS SUBSTRATES BY MOLECULAR BEAM DEPOSITIONMEGGITT BT; PARKER EHC; KING RM et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 6; PP. 528-530; BIBL. 14 REF.Article

ELECTRICAL AND STRUCTURAL PROPERTIES OF INAS LAYERS ON (100) GAAS SUBSTANCES PREPARED BY MOLECULAR BEAM DEPOSITIONMEGGITT BT; PARKER EHC; KING RM et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 50; NO 2; PP. 538-548; BIBL. 48 REF.Article

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